Title: /Classical_semiconductors GaAs_GW
Browse item: https://iochem-bd.iciq.es:443/browse/handle/100/40324
Program: vasp 6.1.0
Author: Nikačević, Pavle
Formula: As4Ga4
Calculation type: Single point
Functional: PBE0 AEXX=100%
Shell type: Closed shell (ISPIN 1)
Temperature: 0.0 K
Pressure: N/A N/A

SETTINGS

SIGMA: 0.05
ISMEAR: 0
LDIPOL: F
IDIPOL: 0
NELECT: 72.0000
ENCUT: 620.00
EDIFF: 0.1E-07
POTIM: 0.5000

ATOM INFO

Atomic coordinates [Å]

Cell parameters:
a = 4.065992685256824
b = 4.065992685256824
c = 4.065992685256824
α = 60.0
β = 60.0
γ = 60.0
Nuclei charge
Ga 13.000
As 5.000
Coordinate type :Both Cartesian Fractional
Cartesian coordinates Fractional coordinates Pseudopotential
x y z u v w

JOB |

DOS

s
py pz px
dxy dyz dz2 dxz dx2
f1 f2 f3 f4 f5 f6 f7

Structure

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